57. Logarithmic singularities and quantum oscillations in magnetically doped topological insulators
D. Nandi, I. Sodemann, K. Shain, G.-H. Lee, K.-F. Huang, C.-Z. Chang, Y. Ou, S.-P. Lee, J. Ward, J. S. Moodera, P. Kim, A. Yacoby
arXiv:1711.10675 (2017, submitted)

56. Chromium-Induced Ferromagnetism with Perpendicular Anisotropy in Topological Crystalline Insulator SnTe (111) Ultra-Thin Films
F. Wang, H. Zhang, J. Jiang, Y.-F. Zhao, J. Yu, W. Liu#, D. Li, M. H. W. Chan, J. Sun, Z. Zhang, and C.-Z. Chang#
(2017, submitted)(#corresponding authors)

55. Realization of the Axion Insulator State in Quantum Anomalous Hall Sandwich Heterostructures
D. Xiao*, J. Jiang*, J.-H. Shin, W. Wang, F. Wang, Y.-F. Zhao, C. Liu, W. Wu, M. H. W. Chan#, N. Samarth# and C.-Z. Chang#
(2017, submitted)(#corresponding authors)(*equal first authors)

54. Unconventional Planar Hall Effect in Exchange-Coupled Topological Insulator-Ferromagnetic Insulator Heterostructures
D. Rakhmilevich, F. Wang, W. Zhao, M. H. W. Chan, C. Liu, and C.-Z. Chang#
(2017, submitted)(#corresponding authors)

53. Dirac-Surface-State-Dominated Spin to Charge Current Conversion in the Topological Insulator (Bi0.22Sb0.78)2Te3 Films at Room Temperature
J. B. S. Mendes, O. Alves-Santos, J. Holanda, R. P. Loreto, C. I. L. de Araujo, C.-Z. Chang, J. S. Moodera, A. Azevedo, and S. M. Rezende
Phys. Rev. B 96,180415(Rapid Communication)(2017)

52. Spectroscopic perspective on the interplay between electronic and magnetic properties of magnetically doped topological insulators
J. A. Krieger, C.-Z. Chang, M.-A. Husanu, D. Sostina,A. Ernst, M. M. Otrokov, T. Prokscha, A. Suter, M. G. Vergniory, E. V. Chulkov, J. S. Moodera, V. N. Strocov, and Z. Salman
Phys. Rev. B 96, 184402 (2017)(Editors’ Suggestion)

51. Dirac-electrons-mediated magnetic proximity effect in topological insulator/magnetic insulator hetero-structures
M. Li#, Q. Song, W. Zhao, J. A Garlow, T.-H. Liu, L. Wu, Y. Zhu, J. Moodera, M. H W Chan, G. Chen#, and C.-Z. Chang#
Phys. Rev. B 96, 201301 (Rapid Communication)(2017) (#corresponding authors)

50. Structural properties of thin-film ferromagnetic topological insulators
C. L. Richardson,J. M. Devine-Stoneman, G. Divitini , M. E. Vickers, C.-Z. Chang , M. Amado, J. S. Moodera and J. W. A. Robinson
Sci. Rep. 7, 12061(2017)

49. Dirac-Surface-State Modulated Spin Dynamics in a Ferrimagnetic Insulator at Room Temperature
C. Tang, Q. Song, C.-Z. Chang, Y. Ohnuma, M. Matsuo, Y. Liu, W. Yuan, Y. Yao, J. S. Moodera, S. Maekawa, W. Han and J. Shi
Phys. Rev. Lett. (2017, submitted)

48. Direct imaging of electron transfer and its influence on superconducting pairing at FeSe/SrTiO3 interface
W. Zhao*, M. Li*, C.-Z. Chang*#, J. Jiang, L. Wu, C. Liu, Y. Zhu#, J. S. Moodera and M. H. W. Chan#,
Sci. Adv. (2017, submitted). (#corresponding authors, *equal first authors)

47. 400 K Perpendicular Ferromagnetic Phase in a Topological Insulator
C. Tang*, C.-Z. Chang*, G. Zhao, Y. Liu, Z. Jiang, C.-X. Liu, M. R. McCartney, D. J. Smith, T. Chen, J. S. Moodera, and J. Shi
Sci. Adv. 3, e1700307(2017) (*equal first authors)

46. Stark effect induced magnetic phase transition near a topological quantum critical point
Z. Zhang , X. Feng , J. Wang , B. Lian , J. Zhang, C.-Z. Chang, , M. Guo Y. Ou , Y. Feng , S.-C. Zhang , K. He , X. Ma , Q.K. Xue and Y. Y. Wang
Nature Nanotech. 12,953 (2017).

Research Articles Before 2017

45. Visualizing ferromagnetic domain behavior of magnetic topological insulator thin films
W. Wang, C.-Z. Chang, J. S. Moodera, W. Wu
npj Quantum Materials 1, 16023 (2016)

44. Observation of the quantum phase transition from quantum anomalous Hall insulator to Anderson insulator and its scaling behavior
C.-Z. Chang*, W. Zhao*, J. Li*, J. K. Jain, C. Liu, J. S. Moodera and M. H. W. Chan
Phys. Rev. Lett. 117, 126802 (2016). (*equal first authors)(Editors’ Suggestion)

43. High Fermi-level spin polarization in the (Bi1− xSbx)2Te3 family of topological insulators: A point contact Andreev reflection study
K. Borisov, C.-Z Chang, J. S. Moodera, P. Stamenov,
Phys. Rev. B 94, 094415 (2016)

42. Origin of the low critical observing temperature of the quantum anomalous Hall effect in V-doped (Bi, Sb)2Te3 film
W. Li*, M. Claassen*, C.-Z Chang*, B. Moritz, T. Jia, C. Zhang, S. Rebec, J. J. Lee, M. Hashimoto, D.-H. Lu, R. G. Moore, J. S.vMoodera, T. P. Devereaux, Z-X Shen,
Sci. Rep. 6, 32732 (2016) (*equal first authors)

41. Dumbbell Defects in FeSe Films: A Scanning Tunneling Microscopy and First-Principles Investigation
D. Huang, T. A. Webb, C. L. Song, C.-Z. Chang, J. S. Moodera, E. Kaxiras, J. E. Hoffman,
Nano Lett. 16, 4224 (2016)

40. Enhanced spin Seebeck effect signal due to spin-momentum locked topological surface states
Z. Jiang, C.-Z. Chang, M. R. Masir, C. Tang, Y. Xu, J. Zheng, J. S. Moodera, A. H. MacDonald and J. Shi,
Nature Commun.7, 11458 (2016)

39. Vortex phase transitions in monolayer FeSe film on SrTiO3
W. Zhao#, C.-Z. Chang#, X. Xi, K. F. Mak and J. S. Moodera,
2D Mater. 3, 024006 (2016) (#corresponding author)

38. Induced superconductivity and engineered Josephson tunneling devices in epitaxial (111)-oriented gold/vanadium heterostructures
P. Wei, F. Katmis, C.-Z. Chang, J. S. Moodera
Nano Lett. 16, 2714 (2016)

37. Quantum Anomalous Hall Effect in Time-Reversal-Symmetry Breaking Topological Insulators
C.-Z. Chang#, M. D. Li,
J. Phys. Condens. Matter. 28, 123002 (2016) (invited long topical review) (#corresponding author)

36. Bounds on nanoscale nematicity in Single-Layer FeSe/SrTiO3
D. Huang, T. A. Webb, S. Fang, C. L. Song, C.-Z. Chang, J. S. Moodera, E. Kaxiras, J. E. Hoffman
Phys. Rev. B 93, 125129 (2016)

35. Structural and proximity-induced ferromagnetic properties of topological insulator-magnetic insulator heterostructures
Z. Jiang, C.-Z. Chang, C. Tang, J. G. Zheng, J. S. Moodera, J. Shi,
AIP Advances 6, 055809 (2016)

34. Field-effect Modulation of Anomalous Hall Effect in Diluted Ferromagnetic Topological Insulator Epitaxial Films
C.-Z. Chang#, M. Liu, Z. Zhang, Y. Wang, K. He and Q. K. Xue
Sci. China-Phys. Mech. Astron. 59, 637501 (2016)(#corresponding author)

33. High-precision realization of robust quantum anomalous Hall state in a hard ferromagnetic topological insulator
C.-Z. Chang#, W. Zhao#, D. Kim, H. Zhang, B. A. Assaf, D. Heiman, S. C. Zhang, C. Liu, M. H. W. Chan and J. S. Moodera#
Nature Mater. 14, 473(2015) (#corresponding authors)

32. Zero-field dissipationless chiral edge transport and the nature of dissipation in the quantum anomalous Hall state
C.-Z. Chang*#, W. Zhao*, D. Kim, P. Wei, J. K. Jain, C. Liu, M. H. W. Chan# and J. S. Moodera#
Phys. Rev. Lett. 115, 057206 (2015) (#corresponding authors, *equal first authors)

31. Experimental verification of van Vleck nature of long-range ferromagnetic order in vanadium-doped three-dimensional topological insulator Sb2Te3
M. D. Li#, C.-Z. Chang#, L. Wu, J. Tao, W. Zhao, M. H. W. Chan, J. S. Moodera, J. Li and Y. M. Zhu#
Phys. Rev. Lett. 114, 146802 (2015) (#corresponding authors)

30. Proximity Driven Enhanced Magnetic Order at Ferromagnetic Insulator / Magnetic Topological Insulator Interface
M. D. Li#, C.-Z. Chang#, B. J. Kirby, M. Jamer, W. Cui, P. Wei, F. Katmis, D. Heiman, J. Li and J. S. Moodera#
Phys. Rev. Lett.115, 087201 (2015) (#corresponding authors)

29. Independent tuning of electronic properties and ferromagnetism in topological insulators with heterostructure approach
Z. Jiang, C.-Z. Chang, C. Tang, P. Wei, J. S. Moodera, J. Shi
Nano Lett. 15, 5835 (2015)

28. Revealing the Empty-State Electronic Structure of Single-Unit-Cell FeSe/SrTiO3
D. Huang, C. L. Song, T. A. Webb, S. Fang, C.-Z. Chang, J. S. Moodera, E. Kaxiras, J. E. Hoffman
Phys. Rev. Lett. 115, 017002 (2015)

27. Inducing magnetism onto the surface of a topological crystalline insulator
B. A. Assaf, F. Katmis, P. Wei, C.-Z. Chang, B. Satpati, J.S. Moodera and D. Heiman
Phys. Rev. B 91, 195310 (2015)

26. Band structure of topological insulators from noise measurements in tunnel junctions
J. P. Cascales, I. Martinez, F. Katmis, C.-Z. Chang, R. Guerrero, J. S. Moodera, F. Aliev
Appl. Phys. Lett. 107, 252402 (2015)

25. Band engineering of Dirac surface states in topological insulators-based van der Waals heterostructures
C.-Z. Chang#, P. Z. Tang, X. Feng, K. Li, X. Ma, , W. H. Duan#, K. He#, and Q. K. Xue
Phys. Rev. Lett. 115, 136801 (2015) (#corresponding authors)

24. Simultaneous electrical-field-effect modulation of both top and bottom Dirac surface states of epitaxial thin films of three-dimensional topological insulators
C.-Z. Chang*, Z. Zhang*, K. Li*, X. Feng, J. Zhang, M. Guo, J. Wang, L. L. Wang, X. Ma, X. Chen, Y. Wang, K. He and Q. K. Xue
Nano Lett. 15, 1090 (2015) (*equal first authors)

23. Breaking time reversal symmetry in topological insulators
C.-Z. Chang#, P. Wei# and J. S. Moodera#,
MRS Bulletin 39, 867 (2014) (#corresponding authors)

22. Chemical potential dependent gap-opening at the Dirac surface states of Bi2Se3 induced by aggregated substitutional Cr atoms
C.-Z. Chang*, P. Z. Tang*, Y. L. Wang, X. Feng, K. Li, Z. C. Zhang, Y. Y. Wang, L. L. Wang, X. Chen, C. X. Liu, W. H. Duan, K. He, X. Ma, and Q. K. Xue
Phys. Rev. Lett. 112, 056801 (2014) (*equal first authors)

21. Crossover between Weak Antilocalization and Weak Localization of Bulk States in Ultrathin Bi2Se3 Films
H. Wang, H. W. Liu, C.-Z. Chang, H. Zuo, Y. Zhao, Y. Sun, Z. Xia, K. He, X. C. Ma, X. C. Xie, Q. K. Xue and J. Wang
Sci. Rep. 4, 5817 (2014)

20. Quantum and Classical Magnetoresistance in Ambipolar Topological Insulator Transistors with Gate-tunable Bulk and Surface Conduction
J. F. Tian, C.-Z. Chang, H. Cao, K. He, X. Ma, Q. K. Xue and Y. P. Chen
Sci. Rep. 4, 4859 (2014)

19. Experimental observation of the quantum anomalous Hall effect in a magnetic topological insulator
C.-Z. Chang*, J. S. Zhang*, X. Feng*, J. Shen*, Z. C. Zhang, M. H. Guo, K. Li, Y. B. Ou, P. Wei, L. Wang, Z. Q. Ji, Y. Feng, S. H. Ji, X. Chen, J. F. Jia, X. Dai, Z. Fang, S. C. Zhang, K. He, Y. Y. Wang, L. Lu, X. C. Ma and Q. K. Xue
Science 339, 1582 (2013) (*equal first authors)

17. Demonstration of surface transport in hybrid Bi2Se3/Bi2Te3 heterostructure
Y. Zhao*, C.-Z. Chang*, Y. Jiang, A. Dasilva, Y. Sun, H. Wang, Y. Xing, Y. Wang, K. He, X. Ma, Q. K. Xue, and J. Wang
Sci. Rep. 3, 3060 (2013) ( *equal first authors)

16. Thin films of magnetically doped topological insulator with carrier-independent long-range ferromagnetic order
C.-Z. Chang, J. S. Zhang, M. H. Liu, Z. C. Zhang, X. Feng, K. Li, L. L. Wang, X. Chen, X. Dai, Z. Fang, X. L. Qi, S. C. Zhang, Y. Wang, K. He, X. C. Ma, and Q. K. Xue
Adv. Mater. 25, 1065 (2013)

15. Experimental proof of universal conductance fluctuation in quasi-one-dimensional epitaxial Bi2Se3 wires
S. Matsuo, K. Chida, D. Chiba, T. Ono, K.Slevin, K. Kobayashi, T. Ohtsuki, C.-Z. Chang, K. He, X. Ma, and Q. K. Xue
Phys. Rev. B 88, 155438 (2013)

14. Conductance fluctuation and weak antilocalization in epitaxial Bi2Se3
S. Matsuo, T. Koyama, K. Shimamura, T. Arakawa, Y. Nishihara, D. Chiba, K. Kobayashi, T. Ono, C.-Z. Chang, K. He, X. C. Ma, and Q. K. Xue
AIP Conf. Proc. 1566, 193 (2013)

13. Anomalous anisotropic magnetoresistance in topological insulator films
J. Wang, H. Li, C.-Z. Chang, K. He, Joon Sue Lee, X.C. Ma, Nitin Samarth, Q. K. Xue, M. H. Xie, and M. H. W. Chan
Nano. Res. 5(10), 739 (2012)

12. Interplay between topological insulators and superconductors
J. Wang, C.-Z. Chang, H. Li, K. He, M. Singh, X. C. Ma, M. H. Xie, Q. K. Xue, and M. H. W. Chan
Phys. Rev. B 85, 045415 (2012)

11. Crossover between weak anti-localization and weak localization in a magnetically doped topological insulator
M. H. Liu*, J. S. Zhang*, C.-Z. Chang*, Z. C. Zhang, X. Feng, K. Li, K. He, L. Wang, X.Chen, X. Dai, Z. Fang, Q. K. Xue, X. Ma, and Y. Y. Wang
Phys. Rev. Lett. 108, 036805 (2012) (*equal first authors)

10. Weak antilocalization and conductance fluctuation in a submicrometer-sized wire of epitaxial Bi2Se3
S. Matsuo, T. Koyama, K. Shimamura, T. Arakawa, Y. Nishihara, D. Chiba, K. Kobayashi, T. Ono, C.-Z. Chang, K. He, X. Ma, and Q. K. Xue
Phys. Rev. B 85, 075440 (2012)

9. Atomic-scale morphology and electronic structure of manganese atomic layers underneath epitaxial graphene on SiC(0001)
T. Gao, Y. Gao, C.-Z. Chang, Y. Chen, M. Liu, S. Xie, K. He, X.C. Ma, Y. Zhang, and Z. F. Liu,
ACS Nano. 6, 6562 (2012)

8. Electron interaction-driven insulating ground state in Bi2Se3 topological insulators in the two-dimensional limit
M. H. Liu, C.-Z. Chang, Z. C. Zhang, Y. Zhang, W. Ruan, K. He, L. L. Wang, X. Chen, J. F, Jia, S. C. Zhang, Q. K. Xue, X. C. Ma, and Y. Y. Wang
Phys. Rev. B 83, 165440 (2011)

7. Structural defects and electronic properties of the Cu-doped topological insulator Bi2Se3
Y. L. Wang, Y. Xu, Y. P. Jiang, J. W. Liu, C.-Z. Chang, M. Chen, Z. Li, C. L. Song, L. L.Wang, K. He, X. Chen, W. H. Duan, Q. K. Xue, and X. C. Ma
Phys. Rev. B 84, 075335 (2011)

6. Evidence for electron-electron interaction in topological insulator thin films
J. Wang, A. M. DaSilva, C.-Z. Chang, K. He, J. K. Jain, N. Samarth, X. C. Ma, Q. K. Xue, and M. H. W. Chan
Phys. Rev. B 83, 245438 (2011)

5. Growth of quantum well films of topological insulator Bi2Se3 on insulating substrate
C.-Z. Chang, K. He, L. L. Wang, X. C. Ma, M. H. Liu, Z. C. Zhang, X. Chen, Y. Y. Wang, and Q. K. Xue
SPIN 1, 21 (2011)

4. Band structure engineering in (Bi1-xSbx )2Te3 ternary topological insulators
J. S. Zhang*, C.-Z. Chang*, Z. C. Zhang, J. Wen, X. Feng, K. Li, M. Liu, K. He, L. Wang, X. Chen, Q. K. Xue, X. Ma, and Y. Y. Wang
Nature Commun. 2, 574 (2011) ( *equal first authors)

3. Crossover of the three-dimensional topological insulator Bi2Se3 to the two-dimensional limit
Y. Zhang, K. He, C.-Z. Chang, C. L. Song, L. L. Wang, X. Chen, J. F. Jia, Z. Fang, X. Dai, W. Y. Shan, S. Q. Shen, Q. Niu, X. L. Qi, S. C. Zhang, X. C. Ma, and Q. K. Xue
Nature Phys. 6, 584 (2010)

2. Doping effects of Sb and Pb in epitaxial topological insulator Bi2Se3 thin films: An in situ angle-resolved photoemission spectroscopy study
Y. Zhang, C.-Z. Chang, K. He, L. L. Wang, X. Chen, J. F. Jia, X. C. Ma, and Q. K. Xue
Appl. Phys. Lett. 97, 194102 (2010)

1. Topological insulator Bi2Se3 thin films grown on double-layer graphene by molecular beam epitaxy
C. L. Song, Y. L. Wang, Y. P. Jiang, Y. Zhang, C.-Z. Chang, L. L. Wang, K. He, X. Chen, J. F. Jia, Y. Y. Wang, Z. Fang, X. Dai, X. C. Xie, X. L. Qi, S. C. Zhang, Q. K. Xue, and X. C. Ma
Appl. Phys. Lett. 97, 143118 (2010)

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