We study the coupled electro-thermo-mechanical physics of next-generation semiconductor devices using state-of-the-art optical characterization methods and multi-physics simulation.
The following video links and review article give a snapshot of our research.
Video link: Electro-thermal co-design of ultra-wide bandgap electronics – Part 1
Video link: Electro-thermal co-design of ultra-wide bandgap electronics – Part 2
Review paper: APL UWBG Perspective
Please check out our educational video links using the Thermal Characterization tab.
Research thrusts:
- Thermal management of extreme power density GaN RF power amplifiers for next-generation wireless communicaiton systems
- Electro-thermal analysis and co-design of ultra-wide bandgap AlGaN, Ga2O3, and diamond power switching devices for future electrified propulsion systems.
- Thermal analysis of piezoelectric MEMS resonators (for 5G mobile phones) and acutators (for piezo inkjet technologies), ferroelectric random access memory (FRAM), and multi layer ceramic capacitors (MLCCs): Thin film piezoelectric MEMS devices based on AlN, AlScN, PZT, and AlBN.
Our core expertise:
- Nanoscale device thermography
- Multi-physics device modeling and electro-thermal co-design
- Thermo-physical property measurement
- Device-level thermal management
We are grateful for generous support by:
- Defense Advanced Research Projects Agency (DARPA)
- Army Research Office (ARO)
- National Science Foundation (NSF)
- Center for Dielectrics and Piezoelectrics (CDP)
Updated 4/4/2024