Our goal is to shed insight into reliability physics of novel microelectronic device technologies using a unique multi-disciplinary approach.
Device technologies we currently study include:
- Ultra-wide bandgap power electronics (Ga2O3, AlGaN, and diamond based systems)
- Wide bandgap semiconductor devices (lateral GaN HEMTs, vertical GaN diodes and transistors, GaN LEDs, SiC devices)
- 2-D layered materials and devices (transition metal dichalcogenides including MoS2)
1. Micro/nanoscale thermography (and local stress measurement) using:
- Raman spectroscopy
- Thermoreflectance thermal imaging
- Infrared (IR) thermography
- Photoluminescence spectroscopy
- Electrical temperature-sensitive-parameter based methods
2. Thermo-physical property measurement using Frequency Domain Thermoreflectance (FDTR).
3. Electrical stress tests.
4. Multi-physics simulation.