The goal of the Penn State TCL is to shed insight into reliability physics of new microelectronic device technologies using a unique multi-disciplinary approach.
– Micro/nanoscale thermometry and local stress measurement using:
- Raman spectroscopy
- Thermoreflectance thermal imaging
- Infrared (IR) thermography
- Photoluminescence spectroscopy
- Electrical temperature-sensitive-parameter based methods
– Thermo-physical property measurement using Frequency Domain Thermoreflectance (FDTR).
– Electrical stress tests.
– Multi-physics simulation.
– Device thermal management.
Device technologies we currently study include:
- Wide bandgap semiconductor devices (lateral GaN HEMTs, vertical GaN diodes and transistors, GaN LEDs, SiC devices, etc.)
- Ultra-wide bandgap power electronics (Ga2O3, AlGaN, and diamond based systems)
- 2-D layered materials and devices (transition metal dichalcogenides)
We believe collaboration is the key to make a significant impact in research!