We are studying the electronic pattern formation in Ca₂RuO₄ during metal-insulator transition employing a combination of phase-field simulations taking carrier diffusion and structural distortion and experimental observations  by collaborator Professor Basov group at Columbia University.

Stripe bifurcation behavior in the vicinity of the metallic and the insulating phase, under a minimal double-well Landau potential and linearly distributed driving force. Insulator-metal transition is limited to the top surface of the sample. The depth of the metallic layer h_M decreases from left (h_M = 0.28 h_film) to right (h_M = 0).