nitride HiPIMS explorer

nitride HiPIMS explorer

In 2014 our group began to use high power impulse magnetron sputtering (HiPIMS) for transparent conducting oxides and immediately appreciated the expanded ability to control plasma energetics and chemistry as compared to RF and dc plasma drives. In 2019, inspired by work from the Fujioka group, we initiated a program to apply HiPIMS plasma drives to group III nitrides, specifically GaN and InN. The choice was originally inspired by low-loss plasmonics in the mid-IR (InN) and high-power electronics (GaN). While there is substantial work needed for optimizing GaN growth at extremely low temperatures (< 600 °C) with suitable electrical/transport properties, early work shows that high crystal quality GaN can be prepared with excellent crystalline fidelity and a step and terrace morphology reminiscent of MOCVD-prepared material.

Josh Nordlander is the current principal instrument user.