Year 1 Review (Arlington, VA, November 1st-3rd, 2023)

Overview of MURI	Rongming Chu Penn State U
Radiation-induced crystalline defects in GaN/AlN/AlGaN by molecular dynamics	Mia Jin Penn State U
Threshold defect formation and properties in GaN/AlN/AlGaN	Blair Tuttle Penn State U
Local defect properties and their signatures in electrical probes of GaN defect spin dynamics	Michael Flatte U Iowa
Design and fabrication of GaN device test structures for collaborative research on radiation effects	Yixin Xiong Penn State U
Transient current induced by heavy ion single event in field-plate and super- heterojunction GaN devices	Jianan Song Penn State U
Cavity formation in GaN/AlN by swift heavy ion irradiation	Xing Wang Penn State U
High-resolution X-ray diffraction to characterize radiation-induced defects and strain in GaN epitaxial structures	Reeja Jayan, Carnegie Mellon U
Electron spin techniques to investigate radiation damage in GaN based devices	Pat Lenahan Penn State U
Effects of gamma irradiation on GaN devices	Nate Martin Penn State U
Understanding radiation-induced defects in GaN devices by electrical characterization techniques	Tania Roy Duke U

Penn State U
Modeling swift ion irradiation in GaN/AlN/AlGaN by molecular dynamics	Farshid Reza
Threshold defect formation and properties in GaN/AlN/AlGaN	Alex Hauck
TEM analysis of SHI irradiation induced structural defects in GaN	Mahjabin Mahfuz
Design and Fabrication of GaN Device Test Structures for Collaborative Research on Radiation Effects	Yixin Xiong
Effects of Gamma Irradiation on GaN devices	Nate Martin
Transient Current Induced by Heavy Ion Single Event in Field-Plate and Super-Heterojunction GaN Devices	Jianan Song
NZFMR, EDMR, EPR Hardware for GaN Studies	Elijah Allridge
Carnegie-Mellon U
High resolution X-ray diffraction to characterize radiation induced defects and strain in GaN epitaxial structures	Renuka Hyderkhan
Duke U
IETS on GaN HEMTs	Md Sazzadur Rahman
AC transconductance and conductance techniques to investigate defects in GaN HEMTs	Md Sazzadur Rahman
U Iowa
Simulation of EDMR and NZFMR in GaN Devices for Detection of Radiation Induced Defects	Joe Sink