Publications over the past 6 years are listed below.  For a complete and up-to-date listing please check Google Scholar


  1. “Effect of substrate on the growth and properties of thin 3R NbS2 films grown by chemical vapor deposition,” Azimkhan Kozhakhmetov, Tanushree H Choudhury, Zakaria Y Al Balushi, Mikhail Chubarov, Joan M Redwing, J. Crystal Growth (2018) in press.
  2. “Realizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors,” Yu-Chuan Lin, Bhakti Jariwala, Brian M Bersch, Ke Xu, Yifan Nie, Baoming Wang, Sarah M Eichfeld, Xiaotian Zhang, Tanushree H Choudhury, Yi Pan, Rafik Addou, Christopher M Smyth, Jun Li, Kehao Zhang, M Aman Haque, Stefan Fölsch, Randall M Feenstra, Robert M Wallace, Kyeongjae Cho, Susan K Fullerton-Shirey, Joan M Redwing, Joshua A Robinson, ACS Nano (2018) in press.
  3. “Diffusion-Controlled Epitaxy of Large Area Coalesced WSe2 Monolayers on Sapphire,” Xiaotian Zhang, Tanushree H Choudhury, Mikhail Chubarov, Yu Xiang, Bhakti Jariwala, Fu Zhang, Nasim Alem, Gwo-Ching Wang, Joshua A Robinson, Joan M Redwing, Nano Lett. (2018) in press.
  4. “In-plane x-ray diffraction for characterization of monolayer and few-layer transition metal dichalcogenide films,” M. Chubarov, T.H. Choudhury, X. Zhang and J.M. Redwing, Nanotechnol. 29 (2018) 055706.


  1. “Uniform p-type doping of silicon nanowires synthesized via vapor-liquid-solid growth with silicon tetrachloride,” C. Kendrick, M.W. Kuo, J. Li, H.T. Shen, T. S. Mayer and J. M. Redwing, J. Appl. Phys. 122 (2017) 235101.
  2. “In situ stress measurements during MOCVD growth of thick N-polar InGaN,” Z.Y. Al Balushi and J.M. Redwing, J. Appl. Phys. 122 (2017) 085303.
  3. “Sulfidation of 2D transition metals (Mo, W, Re, Nb, Ta): thermodynamics, processing and characterization,” H. Simchi, T.N. Walter, T.H. Choudhury, L.Y. Kirkley, J.M. Redwing and S.E. Mohney, J. Materials Sci. 52 (2017) 10127.
  4. “Controlling silicon crystallization in aluminum-induced crystallization via substrate plasma treatment,” M.F. Hainey Jr., J.L. Innocent-Dolor, T.H. Choudhury and J.M. Redwing, J. Appl. Phys. 121 (2017) 115301.
  5. “The effect of polarity on MOCVD growth of thick InGaN,” Z.Y. Al Balushi and J.M. Redwing, Appl. Phys. Lett. 101 (2017) 022101.
  6. “Controlled synthesis of 2D transition metal dichalcogenides: from vertical to planar MoS2,” F. Zhang, K. Momeni, M. Abu AlSaud, A. Azizi, M.F. Hainey Jr., J.M. Redwing, L.Q. Chen and N. Alem, 2D Materials 4 (2017) 025029.


  1. “Thin film transistors using wafer-scale low-temperature MOCVD WSe2,” Y. Gong, X. Zhang, J.M. Redwing and T.N. Jackson, J. Electron. Mater. 45 (2016) pp. 6280-6284.
  2. “Influence of carbon in metalorganic chemical vapor deposition of few-layer WSe2 thin films,” X.T. Zhang, Z.Y. Al Balushi, F. Zhang, T.H. Choudhury, S.M. Eichfeld, N. Alem, T.N. Jackson, J.A. Robinson, and J.M. Redwing, J. Electron. Mater. 45 (2016) pp. 6273-6279.
  3. “Silicon micro/nanowire solar cells,” C.E. Kendrick and J.M. Redwing, in Semiconductors and Semimetals, Semiconductor Nanowires II: Properties and Applications, , Vol. 94, eds. S.A. Dayeh, A. Fontcuberta i Morral and C. Jagadish, 2016.
  4. “Radial junction silicon nanowire photovoltaics with Heterojunction with Intrinsic Thin layer (HIT) structure,” X. Wang, H.T. Shen, S.M. Eichfield, T.S. Mayer and J.M. Redwing, IEEE J. Photovoltaics 6 (2016) pp. 1446-1450.
  5. “Two dimensional gallium nitride realized via graphene encapsulation,” Y. Al Balushi, K. Wang, R.K. Ghosh, R.A. Vilá, S.M. Eichfeld, J.D. Caldwell, X.Y. Qin, Y.C. Lin, P.A. DeSario, G. Stone, S. Subramanian, D.F. Paul, R.M. Wallace, S. Datta, J.M. Redwing, J.A. Robinson, Nature Mater. 15 (2016) pp. 1166–1171.
  6. “Aluminum-catalyzed silicon nanowires: Growth methods, properties and applications,” M.F. Hainey and J.M. Redwing, invited, Appl. Phys. Rev. 3 (2016) Art. No. 040806.
  7. “Nanotextured solar cells using aluminum as a catalyst and dopant,” M.F. Hainey, C. Chen, A. Brigeman, N. Geibink, M.R. Black, J. M. Redwing, Proceed. 43rd IEEE Photovoltaic Specialists Conference (PVSC) pp. 2896-2899.
  8. “Controlled faceting and morphology for light trapping in aluminum-catalyzed silicon nanostructures,” M.F. Hainey, C. Chen, Y. Ke, M.R. Black and J.M. Redwing, J. Crystal Growth 452 (2016) pp. 248-252.
  9. “Hybrid physical-chemical vapor deposition of Bi2Se3,” J.E. Brom, L. Weiss, T.H. Choudhury, J.M. Redwing, J. Crystal Growth 452 (2016) pp. 230-234.
  10. “Synthesis, characterization and chemical stability of silicon dichalcogenides, Si(SexS1−x)2,” C. Chen, X.T. Zhang, L. Krishna, C. Kendrick, S.L. Shang, E. Toberer, Z.K. Liu, A. Tamboli and J.M. Redwing, J. Crystal Growth 452 (2016) pp. 151-157.
  11. “Study on chemical vapor deposition growth and transmission electron microscopy MoS2/h-BN heterostructure,” F. Zhang, M.A. Al Saud, M. Hainey, K. Wang, J.M. Redwing and N. Alem, Microscopy and Microanalysis 22 (2016) pp. 1640-1641.
  12. “Lateral versus vertical growth of two-dimensional layered transition-metal dichalcogenides: Thermodynamic insight into MoS2,” L. Shang, G. Lindwall, Y. Wang, J.M. Redwing, T. Anderson and Z.K. Liu, Nano Lett. 16 (2016) pp. 5742-5750.
  13. “Heteroepitaxial growth of GaN on vertical Si{110} sidewalls formed on trench-etched Si(001) substrates,” J. C. Gagnon, H.T. Shen, Y.W. Yu, K. Wang, T.S. Mayer and J.M. Redwing, J. Crystal Growth 446 (2016) pp. 1-6.
  14. “Carrier gas effects on aluminum-catalyzed silicon nanowire growth,” Y. Ke, M. Hainey Jr., D.J. Won, X.J. Weng, S.M. Eichfeld and J.M. Redwing, Nanotechnology 27 (2016) Art. No. 135605.


  1. “In-situ stress measurements during direct growth of GaN on SiC,” Z. Y. Al Balushi and J.M. Redwing, J. Mater. Research 30 (2015), pp. 2900-2909.
  2. “Aluminum-catalyzed growth of <110> silicon nanowires,” M. Hainey Jr., S.M. Eichfeld, H.T. Shen, J. Yim, M.R. Black and J.M. Redwing, J. Electron. Mater. 44 (2015) pp. 1332-1337.
  3. “The impact of graphene properties on GaN and AlN nucleation,” Z.Y. Al Balushi, T. Miyagi, Y.C. Lin, K. Wang, L. Calderin, G. Bhimanapati, J.M. Redwing and J.A. Robinson, Surf. Sci. 634 (2015) pp. 81-88.
  4. “Magnetotransport phenomena in Bi2Se3 thin film topological insulators grown by hybrid physical chemical vapor deposition,” R. Kumar, J.E. Brom, J.M. Redwing and F. Hunte, J. Appl. Phys. 117 (2015) Art. No. 065302.
  5. “Highly scalable, atomically thin WSe2 grown via metalorganic chemical vapor deposition,” S.M. Eichfeld, L. Hossain, Y.C. Lin, A.F. Piasecki, B. Kupp, A.G. Birdwell, R.A. Burke, N. Lu, X. Peng, J. Li, A. Azcatl, S. McDonnell, R.M. Wallace, M.J. Kim, T.S. Mayer, J.M. Redwing and J.A. Robinson, ACS Nano 9 (2015) pp. 2080-2087.
  6. “The effects of shell layer morphology and processing on the electrical and photovoltaic properties of silicon nanowire radial p+n+ junctions, X. Wang, Y. Ke, C.E. Kendrick, X.J. Weng, H.T. Shen, M.W. Kuo, T.S. Mayer and J.M. Redwing, Nanoscale 7 (2015) pp. 7267-7274.


  1. “The influence of buffer layer coalescence on stress evolution in GaN grown on ion implanted AlN/Si(111) substrates,” J.C. Gagnon, J.M. Leathersich, F. Shahedipour-Sandvik and J.M. Redwing, J. Crystal Growth 393 (2014) pp. 98-102.
  2. “Study of wafer thickness scaling in n-type rear-emitter solar cells with different bulk lifetimes,” C. Chen, W. Zhang, Z. Xing, Y. Sun, R. Jia, Z. Jin, X.Y. Liu and J.M. Redwing, J. Appl. Phys. 116 (2014) Art. No. 053105.
  3. “Molecular doping control at a topological insulator surface: F-4-TCNQ on Bi2Se3,” J. Wang, A.S. Hewitt, R. Kumar, J. Boltersdorf, T. Guan, F. Hunte, P.A. Maggard, J.E. Brom, J.M. Redwing and D.B. Dougherty, J. Phys. Chem. C 118 (2014) pp. 14860-14865.
  4. “Controlled growth of SiNPs by plasma synthesis,” C. Kendrick, G. Klafehn, T.Y. Guan, I. Anderson, H.T. Shen, J. Redwing and R. Collins,” Solar Energy Mater. and Solar Cells, 124 (2014) pp. 1-9.
  5. “Ultrafast electrical measurements of isolated silicon nanowires and nanocrystals,” M.R. Bergren, C.E. Kendrick, N.R. Neale, J.M. Redwing, R.T. Collins, T.E. Furtak and M.C. Beard, J. Phys. Chem. Lett. 5 (2014) pp. 2050-2057.


  1. “Influence of growth stress on the surface morphology of N-polar GaN films grown on vicinal C-face SiC substrates,” D.J. Won, X.J. Weng, Z. Al Balushi and J.M. Redwing, Appl. Phys. Lett. 103 (2013) Art. No. 241908.
  2. “Silicon nanowire growth on poly-silicon-on-quartz substrates formed by aluminum-induced crystallization,” C. Kendrick, C. Bomberger, N. Dawley, J. Georgiev, H. Shen and J.M. Redwing, Crystal Res. and Tech. 48 (2013) pp. 658-665.
  3. “Vapor-liquid-solid growth of <110> silicon nanowire arrays,” S.M. Eichfeld, M.F. Hainey, H. Shen, C.E. Kendrick, E.A. Fucinato, J. Yim and M.R. Black, Proceed. SPIE 8820 (2013) Art. No. 882001
  4. “Effect of AlN buffer layer on the surface morphology and structural properties of N-polar GaN films grown on vicinal C-face SiC substrates,” D. Won and J.M. Redwing, J. Crystal Growth 377 (2013) pp. 51-58.
  5. “FDTD modeling of solar energy absorption in silicon branched nanowires,” C. Lundgren, R. Lopez, J. Redwing and K. Melde, Optics Express 21 (2013) pp. A392-A400.
  6. “Ion implantation-induced damage characteristics within AlN and Si for GaN-on-Si epitaxy,” J.M. Leathersich, M. Tungare, X.J. Weng, P. Suvarna, P. Agnihotri, M. Evans, J. Redwing and F. Shahedipour-Sandvik, J. Electron. Mater. 42 (2013) pp. 833-837.
  7. “GaN growth on Si pillar arrays by metalorganic chemical vapor deposition,” D. Won, X.J. Weng, Y.A. Yuwen, Y. Ke, C. Kendrick, H.T. Shen, T.S. Mayer and J.M. Redwing, J. Crystal Growth 370 (2013) pp. 259-264.
  8. “Modification of dislocation behavior in GaN overgrown on engineered AlN film-on-bulk Si substrate,” M. Tungare, X.J. Weng, J.M. Leathersich, P. Suvarna, J.M. Redwing and F. Shahedipour-Sandvik, J. Appl. Phys. 113 (2013) Art. No. 163108.


  1. “Dislocation bending and tensile stress generation in GaN and AlGaN films,” S. Raghavan, I.C. Manning, X.J. Weng and J.M. Redwing, J. Crystal Growth 359 (2012) pp. 35-42.
  2. “Local electrode atom probe analysis of silicon nanowires grown with an aluminum catalyst,” C.M. Eichfeld, S.S.A. Gerstl, T. Prosa, Y. Ke, J.M. Redwing and S.E. Mohney, Nanotechnol. 23 (2012) Art. No. 215205.
  3. “In-situ stress measurements during GaN growth on ion-implanted AlN/Si substrates,” J.C. Gagnon, M. Tungare, X.J. Weng, J.M. Leathersich, F. Shahedipour-Sandvik and J.M. Redwing, J. Electron. Mater. 41 (2012) pp. 865-872.
  4. “Structural and electrical properties of epitaxial Bi2Se3 thin films grown by hybrid physical-chemical vapor deposition, J.E. Brom, Y. Ke, R.Z. Du, D. Won, X.J. Weng, K. Andre, J.C. Gagnon, S.E. Mohney, Q. Li, K. Chen, X.X. Xi and J.M. Redwing, Appl. Phys. Lett. 100 (2012) Art. No. 162110.
  5. “Metalorganic chemical vapor deposition of N-polar GaN films on vicinal SiC substrates using indium surfactants,” D.J. Won, X.J. Weng and J.M. Redwing, Appl. Phys. Lett. 100 (2012) Art. No. 021913.


  1. “The effect of pattern density and wire diameter on the growth rate of micron diameter silicon wires,” C.E. Kendrick and J.M. Redwing, J. Crystal Growth 337 (2011) pp. 1-6.
  2. “High-field properties of carbon-doped MgB2 thin films by hybrid physical-chemical vapor deposition using different carbon sources,” W.Q. Dai, A.V. Pogrebnyakov, R.H.T. Wilke, K. Chen, X.J. Weng, J. Redwing, C.W. Bark, C.B. Eom, Y. Zhu, P.M. Voyles, D. Rickel, J.B. Betts, C.H. Mielke, A. Gurevich, D.C. Larbalestier, Q. Li and X.X. Xi, Supercond. Sci. Technol. 24 (2011) Art No. 125014.
  3. “Single wire radial junction photovoltaic devices fabricated using aluminum catalyzed silicon nanowires,” Y. Ke, X. Wang, X.J. Weng, C.E. Kendrick, Y.A. Yu, S.M. Eichfeld, H.P. Yoon, J.M. Redwing, T. S. Mayer and Y.M. Habib, Nanotechnol. 22 (2011) Art. No. 445401.
  4. “Gas phase equilibrium limitations on the vapor-liquid-solid growth of epitaxial silicon nanowires using SiCl4,” S.M. Eichfeld, H.T. Shen, C.M. Eichfeld, S.E. Mohney, E.C. Dickey and J.M. Redwing, J. Mater. Res. 26 (2011) pp. 2207-2214.
  5. “Group III-A Nitrides on Si: Stress and Microstructural Evolution,” S. Raghavan and J.M. Redwing, invited book chapter in III-V Compound Semiconductors: Integration with Silicon-based Microelectronics, eds. T.K. Li, M. Mastro and A. Dadgar, CRC Press, 2011.
  6. “MgB2/MgO/MgB2 Josephson Junctions for high-speed circuits,” K. Chen, C.G. Li, Q. Li, X. Weng, J.M. Redwing, Y. Zhu, P.M. Voyles and X.X. Xi, IEEE Trans. Appl. Supercond. 21 (2011) pp. 115-118.
  7. “Tin-catalyzed plasma-assisted growth of silicon nanowires,” S.J. Rathi, B.N. Jariwala, J.D. Beach, P. Stradins, P.C. Taylor, X.J. Weng, Y. Ke, J.M. Redwing, S. Agarwal and R.T. Collins, J. Phys. Chem. C 115 (2011) pp. 3833-3839.
  8. “Seeding of silicon wire growth by out-diffused metal precipitates,” V. Ganapati, D.P. Fenning, M.I. Bertoni, C.E. Kendrick, A.E. Fecych, J.M. Redwing and T. Buonassisi, Small 7 (2011) pp. 563-567.
  9. “Ti/Al ohmic contacts to n-type GaN nanowires,” F. Ye, K. Shi, R. Burke, J.M. Redwing and S.E. Mohney, J. Nanomater. (2011) Art. 876287.
  10. “Dual temperature process for reduction in regrowth interfacial charge in AlGaN/GaN HEMTs grown on GaN substrates,” S.M. Eichfeld, D.J. Wong, K. Trumbull, M. Labella, X.J. Weng, J. Robinson, D.Snyder, J.M. Redwing, T. Paskova, K. Udwary, G. Mulholland, E. Preble and K.R. Evans, Phys. Stat. Solidi C. 8 (2011) pp. 2053-2055.