Publications

2023

106. Zhu, H., Nayir, N., Choudhury, T., Bansal, A., Huet, B., Zhang, K., Puretzky, A., Bachu, S., York, K., Mc Knight, T., Trainor, N., Oberoi, A., Wang, K., Das, S., Makin, R., Durbin, S., Huang, S., Alem, N., Crespi, V., Van Duin, A., Step engineering for nucleation and domain orientation control in WSe2 epitaxy on c-plane sapphire. Nature Nanotechnology (2023)

105. Schranghamer, T. F., Stepanoff, Trainor, N., Redwing, J. M., Wolfe, D. F., Das, S. Ultra-scaled phototransistors based on monolayer MoS2. Device, 1 (4), 100102, (2023).

104. Wali, A., & Das, S. Two-Dimensional Memtransistors for Non-Von Neumann Computing: Progress and Challenges. Advanced Functional Materials, 2308129, (2023).

103.S Ghosh, S., Pannone, A., Sen, D., Wali, A., Ravichandran, H., Das, S. An All 2D Bio-inspired Gustatory Circuit for Mimicking Physiology and Psychology of Feeding Behavior. Nature Communications, 14, 6021, (2023).

102. Sadaf, M., Sakib, N., Pannone, A., Ravichandran, H., Das, S. A Bio-inspired Visuotactile Neuron for Multisensory Integration. Nature Communications, 14, 5729, (2023).

101. Ravichandran, H., Sen, D., Wali, A., Schranghamer, T. F., Trainor, N., Redwing, J. M., Ray, B., Das, S. A Peripheral-Free True Random Number Generator Based on Integrated Circuits Enabled by Atomically Thin Two-Dimensional Materials. ACS Nano, 17 (17), 16817-16826, (2023).

100. Torsi, R., Munson, K. T., Pendurthi, R., Marques, E., Troeye, B. V., Huberich, L., Schuler, B., Feidler, M., Wang, K., Pourtois, G., Das, S., Asbury, J. B., Lin, Y., Robinson, J. A. Dilute Rhenium Doping, and its Impact on Defects in MoS2. ACS Nano, 17 (16), 15629-15640, (2023).

99. Ravichandran, H., Knobloch, T., Pannone, A., Karl, A., Stampfer, B., Waldhoer, D., Zheng, Y., Sakib, N., Sadaf, M., Pendurthi, M., Torsi, R., Robinson, J. A., Grasser, T., Das, S. Observation of Rich Defect Dynamics in Monolayer MoS2. ACS Nano, 17 (15), 14449-14460, (2023).

98. Schranghamer, T. F., Pannone, A., Ravichandran, H., Stepanoff, S. P., Trainor, N., Redwing, J. M., Wolfe, D. E., Das, S. Radiation Resilient Two-Dimensional Electronics. ACS Applied Materials & Interfaces, 15 (22), 26946–26959, (2023).

97. Ghosh, S., Zheng, Y., Subbulakshmi Radhakrishnan, S., Schranghamer, T. F., Das, S. A Graphene-Based Straintronic Physically Unclonable Function. Nano Letters, 23 (11), 5171–5179, (2023).

96. Schranghamer, T. F., Sakib, N., Sadaf, M., Subbulakshmi Radhakrishnan, S., Pendurthi, R., Agyapong, A. D., Stepanoff, S. P., Torsi, R., Chen, C., Redwing, J. M., Robinson, J. A., Wolfe, D. F., Mohney, S. E., Das, S. Ultra-scaled Contacts to Monolayer MoS2 Field Effect Transistors. Nano letters, 23 (8), 3426-3434, (2023).

95. Zheng, Y., Sen, D., Das, S., & Das, S. Graphene Strain-Effect Transistor with Colossal ON/OFF Current Ratio Enabled by Reversible Nanocrack Formation in Metal Electrodes on Piezoelectric Substrates. Nano Letters, 23 (7), 2536-2543, (2023).

94. Wali, A., & Das, S. Hardware and Information Security Primitives Based on Two‐Dimensional Materials and Devices. Advanced Materials, 35 (18), 2205365, (2023).

93. Jayachandran, D., Pannone, A., Das, M., Schranghamer, T. F., Sen, D., & Das, S. Insect-Inspired, Spike-Based, in-Sensor, and Night-Time Collision Detector Based on Atomically Thin and Light-Sensitive Memtransistors. ACS Nano, 17, 2, 1068–1080, (2023).

92. Ravichandran, H., Zheng, Y., Schranghamer, T. F., Trainor, N., Redwing, J. M., & Das, S. A Monolithic Stochastic Computing Architecture for Energy Efficient Arithmetic. Advanced Materials, 35 (2), 2206168, (2023).

2022

91. Jayachandran, D., Pannone, A., Das, M., Schranghamer, T. F., Sen, D., & Das, S. Insect-Inspired, Spike-Based, in-Sensor, and Night-Time Collision Detector Based on Atomically Thin and Light-Sensitive Memtransistors. ACS Nano. [In press – forthcoming December 2022].

90. Dodda, A., Jayachandran, D., Pannone, A., Trainor, N., Stepanoff, S. P., Steves, M. A., Subbulakhshmi Radhakrishnan, S., Bachu, S., Ordonez, C. W., Shallenberger, J. R., Redwing, J. M., Knappenberger, K., Wolfe, D. E., & Das, S. Active pixel sensor matrix based on monolayer MoS2 phototransistor array. Nature Materials, 21, 1379–1387. (Cover Article)

89. Dodda, A., Jayachandran, D., Pannone, A., Subbulakhshmi Radhakrishnan, S., Trainor, N., Redwing, J. M., & Das, S. A Bio-inspired and Low-power 2D Machine Vision with Adaptive Machine Learning and Forgetting. ACS Nano, 16, 12, 20010–20020, (2022).

88. Subbulakshmi Radhakrishnan, S., Dodda, A., & Das, S. An All-in-One Bio-inspired Neural Network. ACS Nano, 16, 12, 20100–20115, (2022).

87. Chakrabarti, S., Wali, A., Ravichandran, H., Kundu, S., Schranghamer, T. F., Basu, K., & Das, S. Logic Locking of Integrated Circuits Enabled by Nanoscale MoS2-Based Memtransistors. ACS Applied Nano Materials, 5, 10, 14447-14455.

86. Sebastian, A., Pendurthi, R., Kozhakhmetov, A., Trainor, N., Robinson, J. A., Redwing, J. M., & Das, S. Two-dimensional materials-based probabilistic synapses and reconfigurable neurons for measuring inference uncertainty using Bayesian neural networks. Nature Communications, 13, 6139, (2022).

85. Zheng, Y., Ravichandran, H., Schranghamer, T. F., Trainor, N., Redwing, J. M., & Das, S. Hardware implementation of Bayesian network based on two-dimensional memtransistors. Nature communications, 13, 5578, (2022).

84. Lei, Y., Zhang, T., Lin, Y. C., Granzier-Nakajima, T., Bepete, G., Kowalczyk, D. A., Lin, Z., Zhou, D., Schranghamer, T. F., Dodda, A., Sebastian, A., Chen, Y., Liu, Y., Pourtois, G., Kempa, T. J., Schuler, B., Edmonds, M. T., Quek, S. Y., Wurstbauer, U., Wu, S. M., Glavin, N. R., Das, S., Dash, S. P., Redwing, J. M., Robinson, J. A., & Terrones, M. (2022). Graphene and Beyond: Recent Advances in Two-Dimensional Materials Synthesis, Properties, and Devices. ACS Nanoscience Au, 2, 6, 450–485 (2022).

83. Das, S., & Das, S. Digital Keying Enabled by Reconfigurable Two‐dimensional Modulators. Advanced Materials, 2203753, (2022).

82. Pendurthi, R., Jayachandran, D., Kozhakhmetov, A., Trainor, N., Robinson, J. A., Redwing, J. M., & Das, S. Heterogeneous integration of atomically thin semiconductors for non‐von Neumann CMOS. Small, 18(33), 2202590, (2022).

81. Dodda, A., Trainor, N., Redwing, J., & Das, S. All-in-one, bio-inspired, and low-power crypto engines for near-sensor security based on two-dimensional memtransistors. Nature Communications, 13, 3587, (2022).

80. Austin, D., Miesle, P., Sessions, D., Motala, M., Moore, D. C., Beyer, G., Miesle, A., Sarangan, A., Sebastian, A., Das, S., Puthirath, A. B., Zhang, X., Hachtel, J., Ajayan, P. M., Back, T., Stevenson, P. R., Brothers, M., Kim, S. S., Buskohl, P., Rao, R., Muratore, C., & Glavin, N. R. High Throughput Data-Driven Design of Laser-Crystallized 2D MoS2 Chemical Sensors: A Demonstration for NO2 Detection. ACS Applied Nano Materials, 5, 5, 7549–7561.

79. Subbulakshmi Radhakrishnan, S., Chakrabarti, S., Sen, D., Das, M., Schranghamer, T., Sebastian, A., & Das. S. A Sparse and Spike-timing-based Adaptive Photo Encoder for Augmenting Machine Vision for Spiking Neural Networks. Advanced Materials, 34, 48, 2202535, (2022).

78. Rai, S., Singh, V. K., Pendurthi, R., Nasr, J. R., Das, S., & Srivastava, A. Unveiling the electrical and photo-physical properties of intrinsic n-type 2D WSe2 for high performance field-effect transistors. Journal of Applied Physics, 131(9), 094301, (2022).

77. Sebastian, A., Das, S. & Das, S. An Annealing Accelerator for Ising Spin Systems Based on In-Memory Complementary 2D FETs. Advanced Materials, 34 (4), 2107076, (2022).

76. Das, S. & Elias, A. L. Leaving defects out of 2D molybdenum disulfide. Nature Electronics, 5 (1), 19-20, (2022).

2021

75. Oberoi, A., Dodda, A., Liu, H., Terrones, M., & Das, S. Secure Electronics Enabled by Atomically Thin and Photosensitive Two-                          Dimensional Memtransistors. ACS Nano, 15, 12, 19815–19827, (2021).

74. Das, S, Sebastian, A., Pop, E., McClellan, C. J., Franklin, A. D., Grasser, T., Knobloch, T., Illarionov, Y., Penumatcha, A. V., Appenzeller, J., Chen, Z., Zhu, W., Asselberghs, I., Li, L., Avci, U. E., Bhat, N., Anthopoulos, T. D., & Singh, R. Transistors based on two-dimensional materials for future integrated circuits. Nature Electronics, 4 (11), 786-799, (2021).

73. Wali, A., Ravichandran, H., & Das, S. A Machine Learning Attack Resilient True Random Number Generator Based on Stochastic Programming of Atomically Thin Transistors. ACS Nano, 15 (11), 17804–17812, (2021).

72. Dodda, A., & Das, S. Demonstration of Stochastic Resonance, Population Coding, and Population Voting Using Artificial MoS2 Based Synapses. ACS Nano, 15 (10), 16172–16182, (2021).

71. Kozhakhmetov,A., Stolz, S., Tan, A. M. Z., Pendurthi, R., Bachu, S., Turker, F., Alem, N., Kachian, J., Das, S., Hennig, R. G., Gröning, O., Schuler, B., & Robinson, J. A. Controllable p‐Type Doping of 2D WSe2 via Vanadium Substitution. Advanced Functional Materials, 31 (42), 2105252, (2021).

70. Schranghamer, T. F., Sharma, M., Singh, R., & Das, S. Review and comparison of layer transfer methods for two-dimensional materials for emerging applications. Chemical Society Reviews, 50, 11032-11054, (2021).

69. Dodda, A., Subbulakshmi Radhakrishnan, S., Schranghamer, T. F., Buzzell, D., Sengupta, P., & Das, S. Graphene-based physically unclonable functions that are reconfigurable and resilient to machine learning attacks. Nature Electronics, 4 (5), 364-374, (2021).

68. Subbulakshmi Radhakrishnan, S., Sebastian, Oberoi, A., Das, S., & Das, S. A biomimetic neural encoder for spiking neural network. Nature Communications, 12 (1), 2143, (2021).

67. A., Sebastian, Pendurthi, R., A., Choudhury, T. H., Redwing, J. M., & Das, S. Benchmarking monolayer MoS2 and WS2 field-effect transistors. Nature Communications, 12 (1), 693, (2021).

66. Wali, A., Kundu, S., Arnold, A. J., Zhao, G., Basu, K., & Das, S. Satisfiability Attack-Resistant Camouflaged Two-Dimensional Heterostructure Devices. ACS Nano, 15 (2), 3453-3467, (2021).

65. Kozhakhmetov, A., Stolz, S., Tan, A. M. Z., Pendurthi, R., Bachu, S., Turker, F., Alem, N., Kachian, J., Das, S., Hennig, R. G., Gröning, O., Schuler, B., Robinson, J. A. Controllable p‐Type Doping of 2D WSe2 via Vanadium Substitution. Advanced Functional Materials, 2105252, (2021).

64. Chubarov, M., Choudhury, T. H., Hickey, D. R., Bachu, S., Zhang, T., Sebastian, A., Bansal, Zhu, H., Trainor, N., Das, S., Terrones, M., Alem, M., & Redwing, J. M. Wafer-Scale Epitaxial Growth of Unidirectional WS2 Monolayers on Sapphire. ACS Nano, 2021, 15, 2, 2532–2541, (2021).

2020

  1. Liu, H., Grasseschi, D., Dodda, A., Fujisawa, K., Olson, D., Kahn, E., Zhang, F., Zhang, T, Lei, Y., Branco, R. B. N., Elías, A. L., Silva, R. C., Yeh, Y., Maroneze, C. M., Seixas, L., Hopkins, P., Das, S., de Matos, C. J. S., & Terrones, M. Spontaneous chemical functionalization via coordination of Au single atoms on monolayer MoS2. Science Advances, 6 (49), eabc9308, (2020).
  1. Kozhakhmetov, A., Schuler, B., Tan, A. M. Z., Cochrane, K. A., Nasr, J. R., El‐Sherif, H., Bansal, A., Vera, A., Bojan, V., Redwing, J. M., Bassim, J., Das, S., Hennig, R. G., Weber‐Bargioni, A., Robinson, J. A. Scalable Substitutional Re‐Doping and its Impact on the Optical and Electronic Properties of Tungsten Diselenide. Advanced Materials, 32 (50), 2005159, (2020).
  1. Zhang, F., Zheng, B., Sebastian, A., Olson, D. H., Liu, M., Fujisawa, K., Pham, Y. T. H., Jimenez, V.O., Kalappattil, V., Miao, L., Zhang, T., Pendurthi, R., Lei, Y., Elías, A. L., Wang, Y., Alem, N., Hopkins, P. E., Das, S., Crespi, V. H., Phan, M., & Terrones, M. Monolayer Vanadium‐Doped Tungsten Disulfide: A Room‐Temperature Dilute Magnetic Semiconductor. Advanced Science, 7 (24), 2001174, (2020).
  1. Schranghamer, T. F., Oberoi, A., & Das, S. Graphene memristive synapses for high precision neuromorphic computing. Nature Communications, 11 (1), 5474, (2020).
  1. Nasr, J. R., Simonson, N., Oberoi, A., Horn, M. W., Robinson, J. A., & Das, S. Low-Power and Ultra-Thin MoS2 Photodetectors on Glass. ACS Nano, 14 (11), 15440-15449, (2020).
  1. Arnold, A. J., Schulman, S. D., & Das, S. Thickness Trends of Electron and Hole Conduction and Contact Carrier Injection in Surface Charge Transfer Doped 2D Field Effect Transistors. ACS Nano, 14 (10), 13557-13568, (2020).
  1. Jayachandran, D., Oberoi, A., Sebastian, A., Choudhury, T. H., Shankar, B., Redwing, J. M., & Das, S. A Low Power Biomimetic Collision Detector Based on In-memory MoS2 Photodetector. Nature Electronics, 3 (10), 646-655, (2020).
  1. Dodda, A., Oberoi, A., Sebastian, A., Choudhury, T. H., Redwing, J. M., & Das, S. Stochastic resonance in MoS2 photodetector. Nature Communications, 11 (1), 4406 (2020).
  1. Thakuria, N., Schulman, D., Das, S., Gupta, S. K. 2-D Strain FET (2D-SFET) Based SRAMs—Part I: Device-Circuit Interactions. IEEE Transactions on Electron Devices, 67 (11), 4866-4874, (2020).
  1. Thakuria, N., Schulman, D., Das, S., Gupta, S. K. 2D Strain FET (2D-SFET)-Based SRAMs—Part II: Back Voltage-Enabled Designs. IEEE Transactions on Electron Devices, 67 (11), 4875-4883, (2020).
  1. Singh, V. K., Pendurthi, R., Nasr, J. R., Mamgain, H., Tiwari, R. S., Das, S., & Srivastava, A. Study on the Growth Parameters Electrical and Optical Behaviors of 2D Tungsten Disulfide. ACS Applied Materials & Interfaces, 12(14), 16576-16583, (2020) . 
  1. Ghosh, A., Noble, J., Sebastian, A., Das, S., & Liu, Z. Digital Holography for Non-Invasive Quantitative Imaging of Two-Dimensional materials. Journal of Applied Physics, 127(8), 084901, (2020). 
  1. Sengupta, P., & Das, S. Photon-assisted heat engines in the THz regime. Journal of Applied Physics, 127(2), 024305, (2020).

2019

  1. Kozhakhmetov, A., Nasr, J. R., Fu, Z., Xu, K., Briggs, N., Addou, R., Wallace, R., Fullerton-Shirey, S. K., Terrones, M. M., Das, S., & Robinson, J. A. (2019). Scalable BEOL compatible 2D tungsten diselenide. 2D Materials, 7(1), 015029, (2019).
  1. Sebastian, A., Pannone, A., Radhakrishnan, S. S., & Das, S. Gaussian synapses for probabilistic neural networks. Nature Communications, 10(1), 4199, (2019).
  1. Das, S., Dodda, A., & Das, S. A biomimetic 2D transistor for audiomorphic computing. Nature Communications, 10 (1), 3450, (2019).
  1. Alameri, D., Nasr, J. R., Karbach, D., Liu, Y., Divan, R., Das, S., & Kuljanishvili, I. Mask-free patterning and selective CVD-growth of 2D-TMDCs semiconductors. Semiconductor Science and Technology, 34 (8), 085010, (2019).
  1. Zhang, F., Lu, Y., Schulman, D. S., Zhang, T., Fujisawa, K., Lin, Z., Lei, Y., Elias, A. L., Das, S., Sinnott, S., & Terrones, H. Carbon doping of WS2 monolayers: Bandgap reduction and p-type doping transport. Science Advances, 5 (5), eaav5003, (2019).
  1. Wali, A., Dodda, A., Wu, Y., Pannone, A., Reddy, L. K., Ozdemir, S. K., Ozbolat, I. T., & Das, S. Biological physically unclonable function. Communications Physics, 2 (1), 39, (2019).
  1. Zhang, X., Zhang, F., Wang, Y., Schulman, D. S. Zhang, T., Bansal, A., Alem, N., Das, S., Crespi, V. H., Terrones, H., & Redwing, J. M. Defect-Controlled Nucleation and Orientation of WSe2 on h-BN: A Route to Single-Crystal Epitaxial Monolayers. ACS Nano, 13 (3), 3341-3352, (2019).
  1. Arnold, A. J., Shi, T., Jovanovic, I., & Das, S., Extraordinary Radiation Hardness of Atomically Thin MoS2. ACS Applied Materials & Interfaces, 11 (8), 8391-8399, (2019).
  1. Nasr, J. R., & Das, S. Seamless Fabrication and Threshold Engineering in Monolayer MoS2 Dual‐Gated Transistors via Hydrogen Silsesquioxane. Advanced Electronic Materials, 5 (4), 1800888, (2019).
  1. Dodda, A., Wali, A., Wu, Y., Pannone, A., Reddy, K. L., Raha, A., Ozdemir, K. S., Ozbolat, T. I., & Das, S. Biological One‐Way Functions for Secure Key Generation. Advanced Theory and Simulations, 2 (2), 1800154 (2019).
  1. Sebastian, A., Zhang, F., Dodda, A., Rawding, D., Liu, H., Zhang, T., Terrones, M., & Das, S. Electrochemical Polishing of Two-Dimensional Materials. ACS Nano, 13 (1), 78–86, (2019).
  1. Briggs, N., Subramanian, S., Lin, Z., Li, X., Zhang, X., Zhang, K., Xiao, K., Geohegan, D., Wallace, R., Chen, L., Terrones, M., Ebrahimi, A., Das, S., Redwing, M. R., Hinkle, C., Momeni, K., Duin, A., Crespi, V., Kar, S., & Robinson, A. J. A roadmap for electronic grade 2D materials. 2D Materials, 6 (2), 022001, (2019).
  1. Nasr, J. R., Schulman, S. D., Sebastian, A., & Das, S. Mobility Deception in Nanoscale Transistors: An Untold Contact Story. Advanced Materials, 31 (2), 1806020, (2019).

2018

  1. Kumar, A., Sebastian, A., Das, S., & Ringe, E. Superior Electro-Oxidation and Corrosion Resistance of Monolayer Transition Metal Disulfides. ACS Applied Materials and Interfaces, 10 (4), 4285–4295, (2018).
  1. Nicholas, S. A., Nasr, J. R., Subramanian, S., Jariwala, B., Zhao, R., Das, S., & Robinson, J. A. Low-temperature metalorganic chemical vapor deposition of molybdenum disulfide on multicomponent glass substrates. FlatChem, 11, 32-37, (2018).
  1. Lin, Z., Lei, Y., Subramanian, S., Briggs, N., Wang, Y., Lo, C., Yalon, E., Lloyd, D., Wu, S., Koski, K., Clark, R., Das, S., Wallace, R. M., Kuech, T., Bunch, J. S., Li, X., Chen, Z., Pop, E., Crespi, V. H., Robinson, J. A., & Terrones, M. Research Update: Recent progress on 2D materials beyond graphene: From ripples, defects, intercalation, and valley dynamics to straintronics and power dissipation. APL Materials, 6 (8), 080701, (2018).
  1. Sengupta, P., Das, S., & Shi, J. The electrothermal conductance and heat capacity of black phosphorus. The Journal of Chemical Physics, 148 (10), 104701 (2018).
  1. Patra, T. K., Zhang, F., Schulman, D. S., Chan, H., Cherukara, M. J., Terrones, M., Das, S., Narayanan, B., & Sankaranarayanan, S. Defect Dynamics in 2-D MoS2 Probed by Using Machine Learning, Atomistic Simulations, and High-Resolution Microscopy. ACS Nano, 12 (8), 8006–8016, (2018).
  1. Cherukara, M. J., Schulman, D. S., Sasikumar, K., Arnold, A. J., Chan, H., Sadasivam, S., Cha, W., Maser, J., Das, S., Sankaranarayanan, S., & Harder, R. J. Three-Dimensional Integrated X-ray Diffraction Imaging of a Native Strain in Multi-Layered WSe2. Nano Letters, 18 (3), 1993–2000, (2018).
  1. Schulman, D. S., Arnold, A. J., & Das, S., Contact engineering for 2D materials and devices. Chemical Society Reviews, 47 (9), 3037–3058, (2018).
  1. Schulman, D. S., May-Radwing, D., Zhang, F., Alem, N., & Das, S. Superior Electro-Oxidation and Corrosion Resistance of Monolayer Transition Metal Disulfides. ACS Applied Materials and Interfaces, 10 (4), 4285–4295, (2018).

2017

  1. Schulman, D. S., Sebastian, A., Buzzell, D., Huang, Y.-T., Arnold, A. J., & Das, S. Facile Electrochemical Synthesis of 2D Monolayers for High Performance Thin Film Transistors. ACS Applied Materials and Interfaces, 9 (51), 44617–44624, (2017).
  1. Huang, Y.-T., Dodda, A., Schulman, D. S., Sebastian, A., Zhang, F., Terrones, M., & Das, S. Anomalous Corrosion of Transition Metal Diselenides Leading to Stable Monolayers. ACS Applied Materials and Interfaces, 9 (44), 39059-39068, (2017).
  1. Schulman, D. S., Arnold, A. J., Razavieh, A., Nasr, J. R., & Das, S. The Prospect of Two-Dimensional Heterostructures: A review of recent breakthroughs. IEEE Nanotechnology Magazine,  11 (2), 6-17, (2017).  (Invited Review Article)
  1. Arnold, A. J., Razavieh, A., Nasr, J. R., Schulman, D. S., Eichfeld, C. M., & Das, S. Mimicking Neurotransmitter Release in Chemical Synapses via Hysteresis Engineering in MoS2 Transistors. ACS Nano, 11 (3), 3110–3118, (2017). 

2016 

  1. Das, S. Two Dimensional Electrostrictive Field Effect Transistor (2D-EFET): A sub-60mV/decade Steep Slope Device with High ON current. Scientific Reports, 6, 34811, (2016).
  1. Das, S., Bera, M. K., Tong, S., Narayanan, B., Kamath, G., Mane, A., Paulikas, A. P., Antonio, M. R., Sankaranarayanan, S., & Roelofs, A. A Self-Limiting Electro-Ablation Technique for the Top-Down Synthesis of Large-Area Monolayer Flakes of 2D Materials. Scientific Reports, 6, 28195, (2016).

2015

  1. G. R. Bhimanapati, Z. Lin, V. Meunier, Y. Jung, J. Cha, S. Das, D. Xiao, Y. Son, M. S. Strano, V. R. Cooper, L. Liang, S. G. Louie, E. Ringe, W. Zhou, S. S. Kim, R. R. Naik, B. G. Sumpter, H. Terrones, F. Xia, Y. Wang, J. Zhu, D. Akinwande, N. Alem, J. A. Schuller, R. E. Schaak, M. Terrones and J. A. RobinsonRecent Advances in Two-Dimensional Materials beyond Graphene”, ACS Nano 9(12), 11509-11539, 2015. (Invited Review Article)
  1. Y. L. Wang, L. R. Thoutam, Z. L. Xiao, J. Hu, S. Das, Z. Q. Mao, J. Wei, R. Divan, A. Luican-Mayer, G. W. Crabtree, and W. K. KwokOrigin of the turn-on temperature behavior in WTe2”, Physical Review B, 92, 180402, 2015
  1. L. R. Thoutam, Z. Xiao, S. Das, A. Luican-Mayer, R. Divan, G. W. Crabtree, and W. K. Kwok, “Temperature-dependent three-dimensional anisotropy of the magnetoresistance in WTe2”, Physical Review Letters, 115 (46602), 2015 (Editor’s Choice) 
  1. S. Das, W. Zhang, A. Hoffmann, M. Demarteau and A. Roelofs, “A Small Signal Amplifier Based on Liquid Ionic Gated Black Phosphorus Field Effect Transistor”, IEEE Electron Device Letters 36(6), 621-623, 2015
  1. S Das, M. Demarteau and A. Roelofs “3D Effect in 2D Crystals: The Case of Nb-Doped Single Crystalline MoS2”, Applied Physics Letters 106(17), 173506, 2015
  1. S. R. Das, J. Kwon, A. Prakash, C. J. Delker, S. Das, D. B. Janes, “Low Frequency Noise in MoSe2 Field Effect Transistor”, Applied Physics Letters 106(8), 083507, 2015. 
  1. S. Das, J. Robinson, H. Terrones and M. Terrones, “2D Materials Beyond Graphene”, Annual Review of Material Research, 45 (1), 2015. (Invited Review Article) 

2014

  1. S. Das, M. Demarteau, and A. Roelofs, “Ambipolar Phosphorene Field Effect Transistor”, ACS Nano 8(11), 11730-38, 2014. 
  1. S Das, Z. Wei, M. Demarteau, M. Dubey, A. Hoffman and A. Roelofs, “Tunable Transport Gap in Phosphorene”, Nano Letters 14(10), 5733-39, 2014.
  1. S. Das, M. Dubey and A. Roelofs, “High Gain Low Noise Fully Complementary CMOS Inverter Based on Bilayer WSe2 Field Effect Transistor”, Applied Physics Letters 105(8), 083511, 2014. 
  1. S. Das, R. Gulotty, A. Sumant and A. Roelofs, “All 2D, High Mobility, Flexible, Transparent, Thinnest Field Effect Transistor”, Nano Letters 14(5), 2861-66, 2014. 
  1. R. Gulotty, S. Das, Y. Liu and A. Sumant, “Effect of hydrogen flow during cooling phase to achieve uniform and repeatable growth of bilayer graphene on copper foils over large area”, Carbon 77, 341-350, 2014.
  1. A. Razavieh, P. Katal-Mohseni, S. Mehrotra, S. Das, X. Li and J. Appenzeller, Effect of Diameter Variation on Electrical Characteristics of Schottky Barrier InAs Nanowire MOSFETs”, ACS Nano 8(6), 6281-87, 2014.
  1. S. Das, A. Prakash, R. Salazar and J. Appenzeller, “Towards Low Power Electronics: Tunneling Phenomena in Di-chalcogenides”, ACS Nano 8(2), 1681-89, 2014.

2013

  1. S. Das and J. Appenzeller, “Where does the Current Flow in the Two Dimensional Layered Systems”, Nano Letters 13(7), 3396-3402, 2013 (LEAST Center Best Paper Award)
  1. S. Das and Joerg Appenzeller, “Screening and Interlayer Coupling in Multilayer MoS2 ”, volume 7, issue 4, pages 268-273, Physica Status Solidi RRL 7(4), 268-273, 2013 (Journal Cover Article)
  1. S. Das and J. Appenzeller, “WSe2 Field Effect Transistor with Enhanced Ambipolar Characteristics”, Applied Physics Letters 103(10), 103501, 2013.
  1. S. Das, H. Y. Chen, A. V. Penumacha and J. Appenzeller, “High Performance Multi-Layer MoS2 Transistor with Scandium Contacts”, Nano Letters 13(1), 100-105, 2013. (Nano Letters Top 20 Most Read Article of 2013)

2012

  1. S. Das and J. Appenzeller, “On the Anomalous Scaling Behavior of Organic Ferroelectric Copolymer PVDF-TrFE”, Organic Electronics 13, 3326-32, 2012. 

2011

  1. S. Das and J. Appenzeller, “FETRAM- an Organic Ferroelectric Material Based Novel Random Access Memory Cell”, Nano Letters 11(9), 4003-7, 2011. 
  1. S. Das and J. Appenzeller, “On the Importance of Band Gap Formation in Graphene for Analog Device Application”, IEEE Transaction on Nanotechnology 10(5), 1093-98, 2011. 
  1. J. T. Smith, S. Das and J. Appenzeller, “Broken-Gap Tunnel MOSFET: A Sub-60mV/decade Transistor with a Constant Inverse Subthreshold Slope”, IEEE Electron Device Letter 32(10), 1367-69, 2011. 
  1. J. T. Smith, C. Sandow, S. Das, R. A. Minamisaw, S. Mantl and J. Appenzeller, “Silicon Nanowire Tunneling Field-Effect Transistor Arrays: Improving Subthreshold Performance Using Excimer Laser Annealing”, IEEE Transaction on Electron Device 58(7), 1822-1829, 2011.