1. Schulman, D. S., Arnold, A. J., & Das, S. Contact engineering for 2D materials and devices. Advance Article, Chemical Society Reviews, (2018).  (Invited Review Article)
  1. Sengupta, P., Das, S., & Shi, J. The electrothermal conductance and heat capacity of black phosphorus. The Journal of Chemical Physics, 148 (10), 104701, (2018)
  1. Cherukara, M. J.,  Schulmann, D. S.,  Sasikumar, K.,  Arnold, A. J., Chan, H., Sadasivam, S., Cha, W., Maser, J., Das, S., Sankaranarayanan, SKRS., Harder, R. J. Three-Dimensional Integrated X-ray Diffraction Imaging of a Native Strain in Multi-Layered WSe2. Nano letters, 18 (3), 1993–2000, (2018).
  1. Schulman, D. S., Rawding, D. M., Zhang, F., Buzzell, D., Alem, N., & Das, S. Superior Electro-Oxidation and Corrosion Resistance of Monolayer Transition Metal Disulfides. ACS Applied Materials and Interfaces, 10 (4), 4285-4294, (2017).


  1. Schulman, D. S., Sebastian, A., Buzzell, D., Huang, Y.-T., Arnold, A. J., & Das, S. Facile Electrochemical Synthesis of 2D Monolayers for High Performance Thin Film Transistors. ACS Applied Materials and Interfaces, 9 (51), 44617–44624, (2017).
  1. Huang, Y.-T., Dodda, A., Schulman, D. S., Sebastian, A., Zhang, F., Terrones, M., & Das, S. Anomalous Corrosion of Transition Metal Diselenides Leading to Stable Monolayers. ACS Applied Materials and Interfaces, 9 (44), 39059-39068, (2017).
  1. Schulman, D. S., Arnold, A. J., Razavieh, A., Nasr, J. R., & Das, S. The Prospect of Two-Dimensional Heterostructures: A review of recent breakthroughs. IEEE Nanotechnology Magazine,  11 (2), 6-17, (2017).  (Invited Review Article)
  1. Arnold, A. J., Razavieh, A., Nasr, J. R., Schulman, D. S., Eichfeld, C. M., & Das, S. Mimicking Neurotransmitter Release in Chemical Synapses via Hysteresis Engineering in MoS2 Transistors. ACS Nano, 11 (3), 3110–3118, (2017). 


  1. Das, S. Two Dimensional Electrostrictive Field Effect Transistor (2D-EFET): A sub-60mV/decade Steep Slope Device with High ON current. Scientific Reports, 6, 34811, (2016).
  1. Das, S., Bera, M. K., Tong, S., Narayanan, B., Kamath, G., Mane, A., Paulikas, A. P., Antonio, M. R., Sankaranarayanan, S., & Roelofs, A. A Self-Limiting Electro-Ablation Technique for the Top-Down Synthesis of Large-Area Monolayer Flakes of 2D Materials. Scientific Reports, 6, 28195, (2016).


  1. G. R. Bhimanapati, Z. Lin, V. Meunier, Y. Jung, J. Cha, S. Das, D. Xiao, Y. Son, M. S. Strano, V. R. Cooper, L. Liang, S. G. Louie, E. Ringe, W. Zhou, S. S. Kim, R. R. Naik, B. G. Sumpter, H. Terrones, F. Xia, Y. Wang, J. Zhu, D. Akinwande, N. Alem, J. A. Schuller, R. E. Schaak, M. Terrones and J. A. RobinsonRecent Advances in Two-Dimensional Materials beyond Graphene”, ACS Nano 9(12), 11509-11539, 2015. (Invited Review Article)
  1. Y. L. Wang, L. R. Thoutam, Z. L. Xiao, J. Hu, S. Das, Z. Q. Mao, J. Wei, R. Divan, A. Luican-Mayer, G. W. Crabtree, and W. K. KwokOrigin of the turn-on temperature behavior in WTe2”, Physical Review B, 92, 180402, 2015
  1. L. R. Thoutam, Z. Xiao, S. Das, A. Luican-Mayer, R. Divan, G. W. Crabtree, and W. K. Kwok, “Temperature-dependent three-dimensional anisotropy of the magnetoresistance in WTe2”, Physical Review Letters, 115 (46602), 2015 (Editor’s Choice) 
  1. S. Das, W. Zhang, A. Hoffmann, M. Demarteau and A. Roelofs, “A Small Signal Amplifier Based on Liquid Ionic Gated Black Phosphorus Field Effect Transistor”, IEEE Electron Device Letters 36(6), 621-623, 2015
  1. S Das, M. Demarteau and A. Roelofs “3D Effect in 2D Crystals: The Case of Nb-Doped Single Crystalline MoS2”, Applied Physics Letters 106(17), 173506, 2015
  1. S. R. Das, J. Kwon, A. Prakash, C. J. Delker, S. Das, D. B. Janes, “Low Frequency Noise in MoSe2 Field Effect Transistor”, Applied Physics Letters 106(8), 083507, 2015. 
  1. S. Das, J. Robinson, H. Terrones and M. Terrones, “2D Materials Beyond Graphene”, Annual Review of Material Research, 45 (1), 2015. (Invited Review Article) 


  1. S. Das, M. Demarteau, and A. Roelofs, “Ambipolar Phosphorene Field Effect Transistor”, ACS Nano 8(11), 11730-38, 2014. 
  1. S Das, Z. Wei, M. Demarteau, M. Dubey, A. Hoffman and A. Roelofs, “Tunable Transport Gap in Phosphorene”, Nano Letters 14(10), 5733-39, 2014.
  1. S. Das, M. Dubey and A. Roelofs, “High Gain Low Noise Fully Complementary CMOS Inverter Based on Bilayer WSe2 Field Effect Transistor”, Applied Physics Letters 105(8), 083511, 2014. 
  1. S. Das, R. Gulotty, A. Sumant and A. Roelofs, “All 2D, High Mobility, Flexible, Transparent, Thinnest Field Effect Transistor”, Nano Letters 14(5), 2861-66, 2014. 
  1. R. Gulotty, S. Das, Y. Liu and A. Sumant, “Effect of hydrogen flow during cooling phase to achieve uniform and repeatable growth of bilayer graphene on copper foils over large area”, Carbon 77, 341-350, 2014.
  1. A. Razavieh, P. Katal-Mohseni, S. Mehrotra, S. Das, X. Li and J. Appenzeller, Effect of Diameter Variation on Electrical Characteristics of Schottky Barrier InAs Nanowire MOSFETs”, ACS Nano 8(6), 6281-87, 2014.
  1. S. Das, A. Prakash, R. Salazar and J. Appenzeller, “Towards Low Power Electronics: Tunneling Phenomena in Di-chalcogenides”, ACS Nano 8(2), 1681-89, 2014.


  1. S. Das and J. Appenzeller, “Where does the Current Flow in the Two Dimensional Layered Systems”, Nano Letters 13(7), 3396-3402, 2013 (LEAST Center Best Paper Award)
  1. S. Das and Joerg Appenzeller, “Screening and Interlayer Coupling in Multilayer MoS2 ”, volume 7, issue 4, pages 268-273, Physica Status Solidi RRL 7(4), 268-273, 2013 (Journal Cover Article)
  1. S. Das and J. Appenzeller, “WSe2 Field Effect Transistor with Enhanced Ambipolar Characteristics”, Applied Physics Letters 103(10), 103501, 2013.
  1. S. Das, H. Y. Chen, A. V. Penumacha and J. Appenzeller, “High Performance Multi-Layer MoS2 Transistor with Scandium Contacts”, Nano Letters 13(1), 100-105, 2013. (Nano Letters Top 20 Most Read Article of 2013)


  1. S. Das and J. Appenzeller, “On the Anomalous Scaling Behavior of Organic Ferroelectric Copolymer PVDF-TrFE”, Organic Electronics 13, 3326-32, 2012. 


  1. S. Das and J. Appenzeller, “FETRAM- an Organic Ferroelectric Material Based Novel Random Access Memory Cell”, Nano Letters 11(9), 4003-7, 2011. 
  1. S. Das and J. Appenzeller, “On the Importance of Band Gap Formation in Graphene for Analog Device Application”, IEEE Transaction on Nanotechnology 10(5), 1093-98, 2011. 
  1. J. T. Smith, S. Das and J. Appenzeller, “Broken-Gap Tunnel MOSFET: A Sub-60mV/decade Transistor with a Constant Inverse Subthreshold Slope”, IEEE Electron Device Letter 32(10), 1367-69, 2011. 
  1. J. T. Smith, C. Sandow, S. Das, R. A. Minamisaw, S. Mantl and J. Appenzeller, “Silicon Nanowire Tunneling Field-Effect Transistor Arrays: Improving Subthreshold Performance Using Excimer Laser Annealing”, IEEE Transaction on Electron Device 58(7), 1822-1829, 2011.