Facilities

HORIBA LabRAM HR Evolution Raman Spectrometer

RS1            RS2

  • Customized/optimized for thermal characterization of microsystems
  • Built-in probe station for in-situ measurement
  • High power 532 nm modulated laser source and customized electronics setup allows transient temperature measurement
  • Ultra-fast mapping module and use of EMCCD detector enables fastest generation of 2-D Raman thermal images

Microsanj NT-210B Thermoreflectance Thermal Image analyzer

TTI1            TTI2

  • Generates an accurate 2-D temperature image with a spatial resolution less than 0.5 μm and temperature resolution of 0.5 °C
  • Capable of transient thermal analysis with a temporal resolution of 50 ns.

QFI InfraScope-TM IR Microscope System

IR1            IR2

  • 512×512 InSb thermal imaging camera used for detecting mid-wave (3-5 μm) infrared radiation Temperature measurement is possible up to 450 °C with a resolution of 0.1 °C
  • Automated pixel-by-pixel emissivity compensation allows quantitative 2-D temperature field assessment

Frequency Domain Thermoreflectance (FDTR)

                   

  • The FDTR technique is an optical pump-probe laser technique where an amplitude-modulated laser beam (the pump, 405 nm wavelength) creates a periodic temperature oscillation at the sample surface, while a second unmodulated beam (the probe, 532 nm wavelength) detects the amplitude and phase of the temperature oscillation which is related to the thermophysical parameters of the material being measured.

 

The following systems are UV and TERS Raman spectrometers at the Materials Characterization Lab that we frequently make use of (http://www.mri.psu.edu/facilities/mcl/)

Horiba LabRam HR Evolution Vis-NIR optimized & AIST-NT Scanning Probe

                    raman-vlabinir

  • Ultra low frequency spectroscopy (> 10cm-1) at 532nm and 633nm wavelengths
  • Optimized NIR capabilities (785nm and 1064nm laser) for ‘soft’ material analysis
  • Large area fast mapping piezo stage (up to 130 x 85 mm), with fast auto-focus tracking
  • Volume mapping
  • Simultaneous Raman/AFM measurements
  • NSOM and TERS capabilities
  • Range of detectors including PMT, EMCCD and LN2 InGaAs detector
  • TCL utilization: Temperature measurement of Si, GaAs based devices

Horiba LabRam HR Evolution UV optimized

                    Raman

  • Deep (229nm) and near UV (364nm) laser lines for resonance Raman
  • Rastering beam spot to avoid laser damage to samples
  • High power visible laser lines (100 mW @ 488nm and 420 mW @ 457nm)
  • Heating/cooling stage (-196oC to 600oC) with four point probe measurement capabilities for in situ analysis of Raman spectra
  • Optimized UV Back Illuminated detector
  • Fully achromatic reflective 74x cassegrain objective (range 200nm-1025nm) and Deep UV optimized 40x objective (range 220nm – 450nm)
  • TCL utilization: Stress measurement of pseudomorphic AlGaN layers, etc.

 

Updated 11/28/2017