We study the coupled electro-thermo-mechanical physics of next-generation semiconductor devices using state-of-the-art optical characterization methods and multi-physics simulation.

The following video links and review article give a snapshot of our research.

Video link: Electro-thermal co-design of ultra-wide bandgap electronics – Part 1

Video link: Electro-thermal co-design of ultra-wide bandgap electronics – Part 2

Review paper: APL UWBG Perspective

Please check out our educational video links using the Thermal Characterization tab.

Research thrusts:

  • Thermal management of extreme power density GaN RF power amplifiers for next-generation wireless communicaiton systems
  • Electro-thermal analysis and co-design of ultra-wide bandgap AlGaN, Ga2O3, and diamond power switching devices for future electrified propulsion systems.
  • Thermal analysis of piezoelectric MEMS resonators (for 5G mobile phones) and acutators (for piezo inkjet technologies), ferroelectric random access memory (FRAM), and multi layer ceramic capacitors (MLCCs): Thin film piezoelectric MEMS devices based on AlN, AlScN, PZT, and AlBN.

Our core expertise:

  • Nanoscale device thermography
  • Multi-physics device modeling and electro-thermal co-design
  • Thermo-physical property measurement
  • Device-level thermal management

We are grateful for generous support by:

  • Defense Advanced Research Projects Agency (DARPA)
  • Army Research Office (ARO)
  • National Science Foundation (NSF)
  • Center for Dielectrics and Piezoelectrics (CDP)

Updated 4/4/2024