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Our goal is to understand the coupled electro-thermo-mechanical physics of next-generation semiconductor devices using state-of-the-art optical characterization methods and multi-physics simulation.

Please check out the educational video links posted on the Thermal Characterization tab.

Device technologies we currently study:

  • Ultra-wide bandgap power electronics: Ga2O3, AlGaN, and diamond transistors
  • Wide bandgap semiconductor devices: GaN RF power amplifiers and LEDs
  • Thin film piezoelectric MEMS: ScAlN resonators/RF filters and PZT actuators
  • 2-D layered materials and devices: transition metal dichalcogenides, hBN

Our core expertise:

  • Nanoscale device thermography
  • Multi-physics device modeling
  • Thermo-physical property measurement of thin films
  • Device-level thermal management

We are grateful for generous support by:

  • National Science Foundation (NSF)
  • Air Force Office of Scientific Research (AFOSR)
  • Center for Dielectrics and Piezoelectrics (CDP)
  • Penn State internal programs: College of Engineering, Materials Research Institute, Institutes of Energy and the Environment, Center for Security Research and Education

Updated 3/6/2020