| Degradation of β-Ga2O3 vertical Ni/Au Schottky diodes under forward bias
R Sun, AR Balog, H Yang, N Alem, MA Scarpulla
IEEE Electron Device Letters
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2023 | |
| Reducing the 3D-2D crossover thickness in Bi2Se3 by heterostructure engineering
Y Wang, H Yi, D Hickey, N Alem, CZ Chang
Bulletin of the American Physical Society
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2023 | |
| Atomistic simulations of double layer graphene structure and its reactivity
M Kowalik, N Nayir, S Bachu, S Dwivedi, N Alem, A Van Duin
Bulletin of the American Physical Society
|
2023 | |
| First-principles prediction of the phase stability of high-entropy oxides
FM Vieira, I Dabo, S SI Almishal, JP Maria, S Venkata Gayathri Ayyagari, …
Bulletin of the American Physical Society
|
2023 | |
| Colossal nonreciprocal Hall effect and the breakdown of Ohm’s law due to a room temperature nonlinear Hall effect
L Min, Y Zhang, Z Xie, L Miao, Y Onishi, N Alem, L Fu, Z Mao
arXiv preprint arXiv:2303.03738
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2023 | |
| Nasim Alem
N Alem
Bulletin of the American Physical Society
|
2023 | |
| Layered Semiconductor Cr0.32Ga0.68Te2.33 with Concurrent Broken Inversion Symmetry and Ferromagnetism: A Bulk Ferrovalley Material Candidate
Y Guan, L Miao, J He, J Ning, Y Chen, W Xie, J Sun, V Gopalan, J Zhu, …
Journal of the American Chemical Society 145 (8), 4683-4690
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2023 | |
| Al Coordination and Ga Interstitial Stability in a β-(Al0.2Ga0.8)2O3 Thin Film
AE Chmielewski, Z Deng, D Duarte-Ruiz, P Moradifar, L Miao, Y Zhang, …
ACS Applied Materials & Interfaces 15 (6), 8601-8608
|
2023 | |
| Strong room-temperature bulk nonlinear Hall effect in a spin-valley locked Dirac material
L Min, H Tan, Z Xie, L Miao, R Zhang, SH Lee, V Gopalan, CX Liu, N Alem, …
Nature communications 14 (1), 364
|
1 | 2023 |
| MOCVD of WSe2 crystals on highly crystalline single-and multi-layer CVD graphene
B Huet, S Bachu, N Alem, DW Snyder, JM Redwing
Carbon 202, 150-160
|
2023 |
