Gallium Oxide

 Our work on β-Ga2O3 characterizes defect formation in bulk crystals and thin film device structures. We observe how doping and alloying impact these defects and the fundamental material properties. Scanning/transmission electron microscopy (S/TEM) and electron energy loss spectroscopy (EELS) are ideal for understanding these defects as well as atomic and electronic structure.

In addition to S/TEM, we implement other advanced characterization techniques at incremental processing stages to understand how each step affects the material properties and ultimately device performance. These techniques include high-resolution x-ray diffraction (HRXRD), atomic force microscopy (AFM), and etch pit density (EPD) mapping with particular focus on defect formation and propagation.

We also study the behavior of β-Ga2O3 materials under in-situ biases such as temperature and voltage. These studies provide atomic-scale insight into failure mechanisms and the role of device-killing defects. Understanding these phenomena is crucial for improving the performance and quality of β-Ga2O3 materials to drive advancements in power electronics and detectors, including numerous potential applications in electric vehicles and space travel.