Research Overview

Alem group research is focused on how advanced electron microscopy imaging and spectroscopy techniques can be utilized to further solve the existing challenges in novel nanostructures and devices.  With the utilization of Scanning/Transmission Electron Microscopy (S/TEM) imaging and electron energy loss spectroscopy (EELS) and through development of advanced data analysis and machine learning algorithms, we aim to understand the underlying physics and chemistry at the atomic scale that leads to certain macroscale physical, electronic, and optical properties. Among all, defects and interfaces can modulate the electronic, plasmonic, and optical properties of nanostructures.  Alem group research is focused on understanding the atomic and chemical structure of the defects, edges, grain boundaries, and interfaces and their stability and transition dynamics using scanning/transmission electron microscopy imaging and spectroscopy under static and dynamic conditions.

Our aim is to understand and develop structure-property relationships in a variety of nanostructures such as 2D materials, complex oxides, high entropy oxides, metalattices, and novel carbon-based and organic nanostructures. Using computer-aided analysis algorithms and through the quantification of the structure at the picometer regime, we aim to uncover the metrology of atomic structure at the defects, dopants, domain walls, and interfaces to further determine the underlying physics leading to anisotropy, symmetry breaking, polarization, configurational entropy, local strain, and ordering in nanostructures.

Highlights

EASY-STEM Matlab Code for atom mapping: https://github.com/miaoleixin1994/EASY-STEM

A screenshot of the EASY STEM interface in Matlab, showing all of the settings and capabilities of the program.

Check out some of our outreach efforts, including this easy demonstration on why atomic structure matters!: https://www.missionmaterialsscience.com/atomic-models

Degradation of β-Ga2O3 vertical Ni/Au Schottky diodes under forward bias

R Sun, AR Balog, H Yang, N Alem, MA Scarpulla
IEEE Electron Device Letters
  2023
Reducing the 3D-2D crossover thickness in Bi2Se3 by heterostructure engineering

Y Wang, H Yi, D Hickey, N Alem, CZ Chang
Bulletin of the American Physical Society
  2023
Atomistic simulations of double layer graphene structure and its reactivity

M Kowalik, N Nayir, S Bachu, S Dwivedi, N Alem, A Van Duin
Bulletin of the American Physical Society
  2023
First-principles prediction of the phase stability of high-entropy oxides

FM Vieira, I Dabo, S SI Almishal, JP Maria, S Venkata Gayathri Ayyagari, …
Bulletin of the American Physical Society
  2023
Colossal nonreciprocal Hall effect and the breakdown of Ohm’s law due to a room temperature nonlinear Hall effect

L Min, Y Zhang, Z Xie, L Miao, Y Onishi, N Alem, L Fu, Z Mao
arXiv preprint arXiv:2303.03738
  2023
Nasim Alem

N Alem
Bulletin of the American Physical Society
  2023
Layered Semiconductor Cr0.32Ga0.68Te2.33 with Concurrent Broken Inversion Symmetry and Ferromagnetism: A Bulk Ferrovalley Material Candidate

Y Guan, L Miao, J He, J Ning, Y Chen, W Xie, J Sun, V Gopalan, J Zhu, …
Journal of the American Chemical Society 145 (8), 4683-4690
  2023
Al Coordination and Ga Interstitial Stability in a β-(Al0.2Ga0.8)2O3 Thin Film

AE Chmielewski, Z Deng, D Duarte-Ruiz, P Moradifar, L Miao, Y Zhang, …
ACS Applied Materials & Interfaces 15 (6), 8601-8608
  2023
Strong room-temperature bulk nonlinear Hall effect in a spin-valley locked Dirac material

L Min, H Tan, Z Xie, L Miao, R Zhang, SH Lee, V Gopalan, CX Liu, N Alem, …
Nature communications 14 (1), 364
1 2023
MOCVD of WSe2 crystals on highly crystalline single-and multi-layer CVD graphene

B Huet, S Bachu, N Alem, DW Snyder, JM Redwing
Carbon 202, 150-160
  2023